?2011 fairchild semiconductor corporation 1 www.fairchildsemi.com FGD4536 rev. c0 FGD4536 360 v pdp trench igbt april 2013 absolute maximum ratings thermal characteristics notes: (1) half sine wave, d < 0.01, pluse width < 1 ? sec * ic_pluse limited by max tj symbol description ratings unit v ces collector to emitter voltage 360 v v ges gate to emitter voltage ? 30 v i c pulse(1)* pulsed collector current @ t c = 25 o c220 a p d maximum power dissipation @ t c = 25 o c125 w maximum power dissipation @ t c = 100 o c50 w t j operating junction temperature -55 to +150 o c t stg storage temperature range -55 to +150 o c t l maximum lead temp. for soldering purposes, 1/8? from case for 5 seconds 300 o c symbol parameter typ. max. unit r ? jc (igbt) thermal resistance, junction to case - 1.0 o c / w r ? ja thermal resistance, junction to ambient - 62.5 o c / w g e c to-252/d-pak FGD4536 360 v pdp trench igbt features ? high current capability ? low saturation voltage: v ce(sat) = 1.59 v @ i c = 50 a ? high input impedance ?fast switching ?rohs compliant applications ? pdp tv, consumer appliances general description using novel trench igbt technology, fairchild ? ?s new series of trench igbts offer the optimum performance for consumer appliances and pdp tv applicati ons where low conduction and switching losses are essential.
FGD4536 360 v pdp trench igbt ?2011 fairchild semiconductor corporation 2 www.fairchildsemi.com FGD4536 rev. c0 package marking and ordering information electrical characteris tics of the igbt t c = 25c unless otherwise noted device marking device package reel size tape width quantity FGD4536 FGD4536tm to252 380mm 16mm - symbol parameter test conditions min. typ. max. unit off characteristics bv ces collector to emitter breakdown voltage v ge = 0v, i c = 250 ? a 360 - - v ? bv ces ? t j temperature coefficient of breakdown voltage v ge = 0v, i c = 250 ? a -0.4-v/ o c i ces collector cut-off current v ce = v ces , v ge = 0v - - 100 ? a i ges g-e leakage current v ge = v ges , v ce = 0v - - 400 na on characteristics v ge(th) g-e threshold voltage i c = 250 ? a, v ce = v ge 2.4 3.3 4.0 v v ce(sat) collector to emitter saturation voltage i c = 20a , v ge = 15v -1.19- v i c = 30a , v ge = 15v -1.33- v i c = 50a , v ge = 15v, t c = 25 o c - 1.59 1.8 v i c = 50a , v ge = 15v, t c = 125 o c -1.66- v dynamic characteristics c ies input capacitance v ce = 30v , v ge = 0v, f = 1mhz - 1295 - pf c oes output capacitance - 56 - pf c res reverse transfer capacitance - 43 - pf switching characteristics t d(on) turn-on delay time v cc = 200v, i c = 20a, r g = 5 ? , v ge = 15v, resistive load, t c = 25 o c -5-ns t r rise time - 20 - ns t d(off) turn-off delay time - 41 - ns t f fall time - 182 - ns t d(on) turn-on delay time v cc = 200v, i c = 20a, r g = 5 ? , v ge = 15v, resistive load, t c = 125 o c -5-ns t r rise time - 21 - ns t d(off) turn-off delay time - 43 - ns t f fall time - 249 - ns q g total gate charge v ce = 200v , i c = 20a, v ge = 15v -47-nc q ge gate to emitter charge - 5.4 - nc q gc gate to collector charge - 15 - nc
FGD4536 360 v pdp trench igbt ?2011 fairchild semiconductor corporation 3 www.fairchildsemi.com FGD4536 rev. c0 typical performance characteristics figure 1. typical output characteristics figure 2. typical output char acteristics figure 3. typical saturation voltage figure 4. transfer characteristics characteristics figure 5. saturation voltage vs. case figure 6. saturation voltage vs. v ge temp erature at variant current level 0123456 0 50 100 150 200 12v 20v t c = 25 o c 15v 10v v ge = 8v collector current, i c [a] collector-emitter volta g e , v ce [ v ] 0123456 0 50 100 150 200 12v 10v 20v t c = 125 o c 15v v ge = 8v collector current, i c [a] collector-emitter voltage, v ce [v] 0123456 0 50 100 150 200 common emitter v ge = 15v t c = 25 o c t c = 125 o c collector current, i c [a] collector-emitter voltage, v ce [v] 024681012 0 50 100 150 200 common emitter v ce = 10v t c = 25 o c t c = 125 o c collector current, i c [a] gate-emitter voltage,v ge [v] 0 4 8 12 16 20 0 4 8 12 16 20 30a i c = 20a 50a common emitter t c = 25 o c collector-emitter voltage , v ce [v] gate-emitter voltage, v ge [v] 20 40 60 80 100 120 140 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 30a 50a i c = 20a common emitter v ge = 15v collector-emitter voltage, v ce [v] collector-emittercase temperature, t c [ o c ]
FGD4536 360 v pdp trench igbt ?2011 fairchild semiconductor corporation 4 www.fairchildsemi.com FGD4536 rev. c0 typical performance characteristics figure 7. saturation voltage vs. v ge figure 8. capacitance characteristics figure 9. gate charge characteristics figure 10. soa characteristics figure 11. turn-on characteristics vs. figure 12. turn-off characteristics vs. 0 4 8 12 16 20 0 4 8 12 16 20 i c = 20a 50a 30a common emitter t c = 125 o c collector-emitter voltage, v ce [ v ] gate-emitter voltage, v ge [v] 0.1 1 10 30 0 400 800 1200 1600 2000 2400 common emitter v ge = 0v, f = 1mhz t c = 25 o c c res c oes c ies capacitance [pf] collector-emitter voltage, v ce [v] 0 1020304050 0 3 6 9 12 15 common emitter t c = 25 o c 200v v cc = 100v gate-emitter voltage, v ge [v] gate charge, q g [nc] 0.1 1 10 100 1000 0.01 0.1 1 10 100 500 single nonrepetitive pulse t c = 25 o c curves must be derated linearly with increase in temperature 1ms dc 10 ? s 100 ? s collector current, i c [a] collector-emitter voltage, v ce [v] 0 1020304050 1 10 100 common emitter v cc = 200v, v ge = 15v i c = 20a t c = 25 o c t c = 125 o c t d(on) t r switching time [ns] gate resistance, r g [ ? ] switching time [ns] gate resistance, r g [ ? ]
FGD4536 360 v pdp trench igbt ?2011 fairchild semiconductor corporation 5 www.fairchildsemi.com FGD4536 rev. c0 typical performance characteristics figure 13. turn-on characteristics vs. figure 14. turn-off characteristics vs. collector current collector current figure 15. switching loss vs. gate resistance figure 16. switching loss vs. collector current figure 17. turn off switching soa characteristics 10 20 30 40 50 1 10 100 common emitter v ge = 15v, r g = 5 ? t c = 25 o c t c = 125 o c t r t d(on) switching time [ns] collector current, i c [a] 10 20 30 40 50 10 100 400 common emitter v ge = 15v, r g = 5 ? t c = 25 o c t c = 125 o c t d(off) t f switching time [ns] collector current, i c [a] 10 20 30 40 50 1 10 100 1000 common emitter v ge = 15v, r g = 5 ? t c = 25 o c t c = 125 o c e on e off switching loss [uj] collector current, i c [a] 0 1020304050 10 100 1000 5000 common emitter v cc = 200v, v ge = 15v i c = 20a t c = 25 o c t c = 125 o c e on e off switching loss [uj] gate resistance, r g [ ? ] collector current, i c [a] collector-emitter voltage, v ce [v]
FGD4536 360 v pdp trench igbt ?2011 fairchild semiconductor corporation 6 www.fairchildsemi.com FGD4536 rev. c0 typical performance characteristics figure 18.transient thermal impedanc e of igbt 10 -5 10 -4 10 -3 10 -2 10 -1 0.01 0.1 1 2 0.05 0.01 0.02 0.1 0.2 single pulse thermal response [zthjc] rectangular pulse duration [sec] duty factor, d = t1/t2 peak t j = pdm x zthjc + t c 0.5 t 1 p dm t 2
FGD4536 360 v pdp trench igbt ?2011 fairchild semiconductor corporation 7 www.fairchildsemi.com FGD4536 rev. c0 dimensions in millimeters mechanical dimensions d-pak
FGD4536 360 v pdp trench igbt ?2011 fairchild semiconductor corporation 8 www.fairchildsemi.com FGD4536 rev. c0 trademarks the following includes registered and unregistered trademarks and service marks, owned by fairchild semiconductor and/or its gl obal subsidiaries, and is not intended to be an exhaustive list of all such trademarks. *trademarks of system general corporation, used under license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes with out further notice to any products herein to improve reliability, function, or design. fairchild does not assume an y liability arising out of the application or use of any product or circuit described herein; neither does it convey an y license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s worldwide terms and conditions, specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized for use as critical co mponents in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used here in: 1. life support devices or systems ar e devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a signi ficant injury of the user. 2. a critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms 2cool? 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